Samsung 1TB 990 EVO Plus PCIe Gen 4.0 x4 / 5.0 x2 NVMe 2.0 Interface Internal SSD - MZ-V9S1T0BW
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- Brand Store: Samsung
- Model: Samsung 1TB 990 EVO Plus
- Availability: Out Of Stock
- Part No: MZ-V9S1T0BW
Key features
GROUNDBREAKING READ/WRITE SPEEDS
LARGE STORAGE CAPACITY
EXCEPTIONAL THERMAL CONTROL
OPTIMIZED PERFORMANCE
NEVER MISS AN UPDATE
LARGE STORAGE CAPACITY
EXCEPTIONAL THERMAL CONTROL
OPTIMIZED PERFORMANCE
NEVER MISS AN UPDATE
Samsung 1TB 990 EVO Plus
| Samsung 1TB M.2 NVMe SSD | |
|---|---|
| Form Factor | M.2 (2280) |
| Capacity | 1TB |
| Interface | PCIe® Gen 4.0 x4 / 5.0 x2, NVMe™ 2.0 |
| Dimensions (W x H x D) | 80.15 x 22.15 x 2.38 mm |
| Weight | Max. 9.0g |
| Storage Memory | Samsung V-NAND TLC |
| Controller | Samsung In-house Controller |
| Cache Memory | HMB (Host Memory Buffer) |
| Performance | |
| Sequential Read Speed | Up to 7,150 MB/s |
| Sequential Write Speed | Up to 6,300 MB/s |
| Random Read (4KB, QD32) | Up to 850,000 IOPS |
| Random Write (4KB, QD32) | Up to 1,350,000 IOPS |
| Environment | |
| Average Power Consumption | Read: 4.3W / Write: 4.2W |
| Power Consumption (Idle) | Typical 60 mW |
| Power Consumption (Sleep) | Typical 5 mW |
| Allowable Voltage | 3.3 V ± 5% |
| Reliability (MTBF) | 1.5 Million Hours |
| Operating Temperature | 0°C - 70°C |
| Shock | 1,500 G & 0.5 ms (Half Sine) |
| Special Features | |
| TRIM Support | Supported |
| S.M.A.R.T. Support | Supported |
| GC (Garbage Collection) | Auto Garbage Collection Algorithm |
| Encryption Support | AES 256-bit, TCG/Opal, IEEE1667 |
| WWN Support | Not Supported |
| Device Sleep Mode Support | Yes |
| General | |
| Manufacturer | Samsung |
|---|---|
| Model | Samsung 1TB 990 EVO Plus |
| Manufacturer Part No | MZ-V9S1T0BW |
| Compatible Country | Middle East, Africa, Iran, Dubai |
| Country of Origin | South Korea |
