Samsung 2TB 990 EVO Plus PCIe Gen 4.0 x4 / 5.0 x2 NVMe 2.0 Interface Internal SSD - MZ-V9S2T0BW
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- Brand Store: Samsung
- Model: Samsung 2TB 990 EVO Plus
- Availability: Out Of Stock
- Part No: MZ-V9S2T0BW
Key features
GROUNDBREAKING READ/WRITE SPEEDS
LARGE STORAGE CAPACITY
EXCEPTIONAL THERMAL CONTROL
OPTIMIZED PERFORMANCE
NEVER MISS AN UPDATE
LARGE STORAGE CAPACITY
EXCEPTIONAL THERMAL CONTROL
OPTIMIZED PERFORMANCE
NEVER MISS AN UPDATE
Samsung 2TB 990 EVO Plus
| Samsung 990 EVO Plus 2TB NVMe SSD | |
|---|---|
| Model Code (Capacity) | MZ-V9S2T0BW (2TB) |
| General Features | |
| Application | Client PCs |
| Form Factor | M.2 (2280) |
| Interface | PCIe® Gen 4.0 x4 / 5.0 x2, NVMe™ 2.0 |
| Dimensions (W x H x D) | 80.15 x 22.15 x 2.38 mm |
| Weight | Max. 9.0g |
| Storage Memory | Samsung V-NAND TLC |
| Controller | Samsung In-house Controller |
| Cache Memory | HMB (Host Memory Buffer) |
| Special Features | |
| TRIM Support | Supported |
| S.M.A.R.T. Support | Supported |
| GC (Garbage Collection) | Auto Garbage Collection Algorithm |
| Encryption Support | AES 256-bit Encryption (Class 0), TCG/Opal, IEEE1667 (Encrypted Drive) |
| WWN Support | Not Supported |
| Device Sleep Mode Support | Yes |
| Performance | |
| Sequential Read | Up to 7,250 MB/s |
| Sequential Write | Up to 6,300 MB/s |
| Random Read (4KB, QD32) | Up to 1,000,000 IOPS |
| Random Write (4KB, QD32) | Up to 1,350,000 IOPS |
| Environment | |
| Average Power Consumption | Read: 4.6W / Write: 4.2W |
| Power Consumption (Idle) | Typical 60mW for all capacities |
| Power Consumption (Sleep) | Typical 5mW for all capacities |
| Allowable Voltage | 3.3V ± 5% |
| Reliability (MTBF) | 1.5 Million Hours |
| Operating Temperature | 0 - 70°C |
| Shock Resistance | 1,500 G & 0.5 ms (Half Sine) |
| General | |
| Manufacturer | Samsung |
|---|---|
| Model | Samsung 2TB 990 EVO Plus |
| Manufacturer Part No | MZ-V9S2T0BW |
| Compatible Country | Middle East, Africa, Iran, Dubai |
| Country of Origin | South Korea |
