Samsung 3.84TB MZILS3T8HCJM-SAS 12Gbps Ri Mlc 2.5inch SSD
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- Brand Store: Samsung
- Model: SanDisk MZILS3T8HCJM-SAS
- Availability: Out Of Stock
- Part No: MZILS3T8HCJM-SAS
Key features
Massive Enterprise Solid-State Volume: Packs a substantial 3.84TB of data-center grade storage capacity within a space-saving 2.5" footprint.
Next-Gen 12Gb/s SAS Interface: Leverages high-bandwidth SAS-3 dual-port architecture to handle massive data queues smoothly and prevent system architecture bottlenecks.
Optimized Read-Intensive (RI) Profile: Specifically tuned for read-heavy operations, pushing sequential read boundaries up to 1,400 MB/s and random reads up to 200,000 IOPS.
Samsung V-NAND Technology: Built using state-of-the-art Vertical NAND (V-NAND) to guarantee superior structural longevity, data retention, and electrical efficiency compared to flat planar flash.
Hardware Power-Loss Protection (PLP): Features specialized onboard tantalum capacitors that supply sufficient temporary power during a sudden blackout to safely flush in-flight cache data to permanent flash.
Enterprise Endurance & Safety: Rated for 1 Drive Write Per Day (DWPD) over a standard 5-year span, backed by end-to-end data path protection and native TCG Enterprise encryption support.
Next-Gen 12Gb/s SAS Interface: Leverages high-bandwidth SAS-3 dual-port architecture to handle massive data queues smoothly and prevent system architecture bottlenecks.
Optimized Read-Intensive (RI) Profile: Specifically tuned for read-heavy operations, pushing sequential read boundaries up to 1,400 MB/s and random reads up to 200,000 IOPS.
Samsung V-NAND Technology: Built using state-of-the-art Vertical NAND (V-NAND) to guarantee superior structural longevity, data retention, and electrical efficiency compared to flat planar flash.
Hardware Power-Loss Protection (PLP): Features specialized onboard tantalum capacitors that supply sufficient temporary power during a sudden blackout to safely flush in-flight cache data to permanent flash.
Enterprise Endurance & Safety: Rated for 1 Drive Write Per Day (DWPD) over a standard 5-year span, backed by end-to-end data path protection and native TCG Enterprise encryption support.
Samsung SanDisk MZILS3T8HCJM-SAS
| Storage Capacity | 3.84 TB (3,840 GB) |
| NAND Flash Type | Samsung 3D V-NAND Multi-Level Cell (MLC) |
| Interface Type | SAS 12Gbps (SAS-3 / Dual-Port) |
| Sustained Sequential Read Speed | Up to 1,400 MB/s |
| Sustained Sequential Write Speed | Up to 930 MB/s |
| Random Read IOPS (4KB) | Up to 200,000 IOPS |
| Random Write IOPS (4KB) | Up to 37,000 IOPS |
| Form Factor | 2.5-inch Small Form Factor (SFF) |
| Z-Height Thickness | 15.0 mm |
| Enclosure Type | Internal Hot-Swap Server Assembly |
| Endurance Rating | 1 DWPD (Drive Writes Per Day over a standard 5-year cycle) |
| MTBF | 2.0 Million Hours |
| Endurance Tier | Enterprise Read-Intensive (RI) |
| Power-Loss Protection | Native Power-Loss Protection (PLP) with integrated backup capacitors |
| System Compatibility | Dell EMC PowerEdge, Dell EMC Compellent and HPE ProLiant enterprise storage environments |
| Deployment | Standard dual-port SAS server storage backplanes with the appropriate generation-specific drive carrier |
| General | |
| Manufacturer | Samsung |
|---|---|
| Model | SanDisk MZILS3T8HCJM-SAS |
| Manufacturer Part No | MZILS3T8HCJM-SAS |
| Compatible Country | Middle East, Africa, Iran, Dubai |
| Country of Origin | California |
