Samsung 4TB 990 EVO Plus PCIe Gen 4.0 x4 / 5.0 x2 NVMe 2.0 Interface Internal SSD - MZ-V9S4T0BW
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- Brand Store: Samsung
- Model: Samsung 4TB 990 EVO Plus
- Availability: Out Of Stock
- Part No: MZ-V9S4T0BW
Key features
GROUNDBREAKING READ/WRITE SPEEDS
LARGE STORAGE CAPACITY
EXCEPTIONAL THERMAL CONTROL
OPTIMIZED PERFORMANCE
NEVER MISS AN UPDATE
LARGE STORAGE CAPACITY
EXCEPTIONAL THERMAL CONTROL
OPTIMIZED PERFORMANCE
NEVER MISS AN UPDATE
| Samsung 990 EVO Plus 4TB NVMe SSD | |
|---|---|
| Model Code (Capacity) | MZ-V9S4T0BW (4TB) |
| General Features | |
| Application | Client PCs |
| Form Factor | M.2 (2280) |
| Interface | PCIe® Gen 4.0 x4 / 5.0 x2, NVMe™ 2.0 |
| Dimensions (W x H x D) | 80.15 x 22.15 x 2.38 mm |
| Weight | Max. 9.0g |
| Storage Memory | Samsung V-NAND TLC |
| Controller | Samsung In-house Controller |
| Cache Memory | HMB (Host Memory Buffer) |
| Special Features | |
| TRIM Support | Supported |
| S.M.A.R.T. Support | Supported |
| GC (Garbage Collection) | Auto Garbage Collection Algorithm |
| Encryption Support | AES 256-bit Encryption (Class 0), TCG/Opal, IEEE1667 (Encrypted Drive) |
| WWN Support | Not Supported |
| Device Sleep Mode Support | Yes |
| Performance | |
| Sequential Read | Up to 7,250 MB/s |
| Sequential Write | Up to 6,300 MB/s |
| Random Read (4KB, QD32) | Up to 1,050,000 IOPS |
| Random Write (4KB, QD32) | Up to 1,400,000 IOPS |
| Environment | |
| Average Power Consumption | Read: 5.5W / Write: 4.8W |
| Power Consumption (Idle) | Typical 60mW for all capacities |
| Power Consumption (Sleep) | Typical 5mW for all capacities |
| Allowable Voltage | 3.3V ± 5% |
| Reliability (MTBF) | 1.5 Million Hours |
| Operating Temperature | 0 - 70°C |
| Shock Resistance | 1,500 G & 0.5 ms (Half Sine) |
| General | |
| Manufacturer | Samsung |
|---|---|
| Model | Samsung 4TB 990 EVO Plus |
| Manufacturer Part No | MZ-V9S4T0BW |
| Compatible Country | Middle East, Africa, Iran, Dubai |
| Country of Origin | South Korea |
